50RIA40 Vishay, 50RIA40 Datasheet - Page 3
![SCR MED POWER 400V 50A TO-65](/photos/5/66/56628/to-208ac_to-65_pkg_sml.jpg)
50RIA40
Manufacturer Part Number
50RIA40
Description
SCR MED POWER 400V 50A TO-65
Manufacturer
Vishay
Datasheet
1.50RIA120.pdf
(7 pages)
Specifications of 50RIA40
Scr Type
Standard Recovery
Voltage - Off State
400V
Voltage - Gate Trigger (vgt) (max)
2.5V
Voltage - On State (vtm) (max)
1.6V
Current - On State (it (av)) (max)
50A
Current - On State (it (rms)) (max)
80A
Current - Gate Trigger (igt) (max)
100mA
Current - Hold (ih) (max)
200mA
Current - Off State (max)
15mA
Current - Non Rep. Surge 50, 60hz (itsm)
1430A, 1490A
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis, Stud Mount
Package / Case
TO-208AC, TO-65
Current - On State (it (rms) (max)
80A
Breakover Current Ibo Max
1490 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
100 mA
Holding Current (ih Max)
200 mA
Mounting Style
Stud
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*50RIA40
VS-50RIA40
VS-50RIA40
VS50RIA40
VS50RIA40
VS-50RIA40
VS-50RIA40
VS50RIA40
VS50RIA40
Note
(1)
Document Number: 93711
Revision: 19-Sep-08
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
V
V
DRM
DRM
≤ 1600 V
≤ 600 V
For technical questions, contact: ind-modules@vishay.com
SYMBOL
SYMBOL
SYMBOL
P
dV/dt
+V
-V
P
dI/dt
V
V
I
G(AV)
I
I
GM
GD
GT
GM
t
t
GD
GT
GM
d
q
GM
Medium Power Thyristors
(Stud Version), 50 A
T
T
T
T
T
T
T
T
T
V
T
T
Gate pulse = 20 V, 15 Ω, t
I
T
Gate pulse = 10 V, 15 Ω source, t
T
dIr/dt = - 10 A/µs, V
TM
J
J
J
J
J
J
J
J
J
J
C
C
C
DRM
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= T
= T
= 125 °C, V
= 25 °C, V
= 125 °C, I
= (2 x rated dI/dt) A
J
J
= Rated voltage
J
J
J
maximum linear to 100 % rated V
maximum linear to 67 % rated V
maximum, t
maximum,
maximum
DM
TM
DM
= Rated V
= 50 A, reapplied dV/dt = 20 V/µs
= Rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
p
R
≤ 5 ms
= 50 V
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
applied
p
DRM
= 6 µs, t
DRM
, I
,
TM
DRM
Vishay High Power Products
p
= 10 A dc resistive circuit
= 20 µs
r
= 0.1 µs maximum
anode to cathode
DRM
DRM
50RIA Series
VALUES
VALUES
VALUES
500
200
100
110
200
250
100
0.9
2.5
2.5
3.5
2.5
5.0
0.2
10
20
10
50
www.vishay.com
(1)
UNITS
UNITS
UNITS
A/µs
V/µs
mA
mA
µs
W
A
V
V
V
3