ST333C08CFM0 Vishay, ST333C08CFM0 Datasheet - Page 6

• Manufacturer Part Number: ST333C08CFM0
• Description: SCR PHASE CONT 800V 720A E-PUK
• Manufacturer: Vishay

Specifications of ST333C08CFM0

• Scr Type: Standard Recovery
• Voltage - Off State: 800V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.96V
• Current - On State (it (av)) (max): 720A
• Current - On State (it (rms)) (max): 1435A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 11000A, 11500A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, E-PUK
• Current - On State (it (rms) (max): 1435A
• Breakover Current Ibo Max: 11500 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.96 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max, Igt: 200mA
• Current It Av: 720A
• On State Rms Current It(rms): 1.435kA
• Peak Non Rep Surge Current Itsm 50hz: 11kA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST333C08CFM0; VS-ST333C08CFM0; VS-ST333C08CFM0; VSST333C08CFM0; VSST333C08CFM0

ST333C..C Series
Vishay High Power Products
www.vishay.com
6
1 E 4
1 E 3
1 E 2
1 E 4
1 E 3
1 E 2
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
1 E 1
50 00
50 00
3 00 0
5 00 0
3 00 0
25 00
3 0 00
2 50 0
1 E 2
1 E 2
1 E 2
2 5 00
1 50 0
20 00
P u lse B ase w id t h (µ s)
P ulse B a se w id th (µ s)
P u lse Ba se w id t h (µ s)
15 00
20 0 0
100 0
1 000
15 00
100 0
5 00
50 0
50 0
tp
tp
For technical questions, contact: [e-mail]
4 00
tp
40 0
4 00
1 E 3
1 E 3
1 E 3
ST33 3 C..C Serie s
Trape zoidal pulse
T
d i/dt = 100 A/µs
200
ST3 33 C.. C Se ries
Trap ezo id al p ulse
T
di/d t = 50 A/µs
C
C
2 00
Snubb er c ircuit
R
C
V
20 0
Snubbe r circuit
R
C
V
ST33 3 C..C Serie s
Sin uso idal pulse
T
= 40°C
s
s
D
= 4 0°C
Snubb er c ircu it
R
C
V
C
s
s
D
10 0
= 80 % V
= 10 o hm s
= 0 .47 µ F
s
s
D
= 1 0 o hm s
= 80 % V
(Hockey PUK Version), 720 A
= 0.47 µF
= 40°C
10 0
1 00
= 1 0 o hm s
= 80 % V
= 0 .47 µF
Inverter Grade Thyristors
5 0 Hz
Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
50 Hz
D RM
50 Hz
D RM
D RM
1 E 4
1 E 4
1 E 4
1 E 1
1 E 1
1 E 1
Snubbe r circ uit
R
C
V
Snubbe r circ uit
R
C
V
s
s
D
s
s
D
= 1 0 o hm s
= 0.4 7 µF
= 80 % V
= 1 0 o hm s
= 0.4 7 µF
= 80 % V
5 00 0
5 00 0
3 00 0
3 00 0
50 00
DR M
D RM
2 50 0
2 50 0
3 00 0
1 E 2
1 E 2
1 E 2
15 0 0
20 00
2 50 0
P u lse Ba se w id th (µs)
P u lse Ba se w id th (µ s)
Pu lse B a se w id th (µ s)
1 50 0
20 00
1 000
1 5 00
10 0 0
10 00
50 0
50 0
50 0
tp
tp
4 00
t p
4 00
Document Number: 93678
1 E 3
1 E 3
1 E 3
40 0
2 00
ST333 C.. C Se ries
Trapezo id al p ulse
T
di/dt = 10 0A /µs
ST33 3C. .C Se ries
Trapezo idal p ulse
T
di/dt = 1 00A /µs
20 0
C
ST33 3C ..C Serie s
Sinuso idal pulse
T
C
Snubb er circ uit
R
C
V
2 00
C
Revision: 15-May-08
s
s
D
= 55°C
= 55°C
10 0
= 55°C
= 1 0 o hm s
= 80 % V
= 0.4 7 µF
1 00
10 0
5 0 Hz
50 Hz
5 0 H z
D RM
1 E 4
1 E 4
1 E 4