ST2600C26R0 Vishay, ST2600C26R0 Datasheet - Page 2

• Manufacturer Part Number: ST2600C26R0
• Description: SCR PHASE CONT 2600V 4800A R-PUK
• Manufacturer: Vishay

Specifications of ST2600C26R0

• Scr Type: Standard Recovery
• Voltage - Off State: 2600V
• Voltage - Gate Trigger (vgt) (max): 4V
• Voltage - On State (vtm) (max): 1.45V
• Current - On State (it (av)) (max): 2220A
• Current - On State (it (rms)) (max): 4800A
• Current - Gate Trigger (igt) (max): 400mA
• Current - Off State (max): 250mA
• Current - Non Rep. Surge 50, 60hz (itsm): 46000A, 48200A
• Mounting Type: Chassis Mount
• Package / Case: R-PUK
• Current - On State (it (rms) (max): 4800A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Hold (ih) (max): -
• Other names: *ST2600C26R0

ELECTRICAL SPECIFICATIONS
Voltage Ratings
ST2600C..R Series
Bulletin I25199 rev. B 02/00
2
Switching
On-state Conduction
I
I
I
I
V
r
V
I
di/dt
t
t
L
d
q
T(AV)
I
T(RMS)
TSM
2
ST2600C..R
t
Type number
T(AV)
T(TO)
TM
t
Parameter
Max. average on-state current
@ Case temperature
Max. average on-state current
@ Heatsink temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
Maximum I
Max. value of threshold voltage
Max. value of on-state slope
resistance
Max. on-state voltage
Max. (typical) latching current
Parameter
Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
Maximum delay time
Typical turn-off time
Voltage
2
Code
t for fusing
20
22
24
26
28
30
V
peak and off-state voltage
DRM
/V
RRM
2000
2200
2400
2600
2800
3000
, max. repetitive
ST2600C..R
ST2600C..R
2220 (1440)
2630 (1160)
V
300 (100)
150 (300)
55 (85)
46000
48200
36800
38500
10580
4800
9640
6770
6150
0.89
1.45
0.19
80
400
2.0
Units Conditions
Units Conditions
KA
A/µs
mΩ
mA
°C
°C
µs
A
A
A
V
V
A
2
s
180° conduction, half sine wave
double side (single side [anode side]) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
T
T
I
T
From 67% V
T
Gate drive 30V, 15Ω, V
Rise time 0.5µs
I
dI
pk
T
J
J
J
J
RR
= 2900A, T
= 800A, t
repetitive peak voltage
= T
= T
= 25°C, V
= T
V
/dt = 20A/µs, V
RSM
J
J
J
max.
max.
max.
, maximum non-
p
2100
2300
2500
2700
2900
3100
DRM
No voltage
50% V
reapplied
No voltage
reapplied
50% V
reapplied
reapplied
C
D
= 1ms, T
V
= 25°C
= 5V
gate drive 20V, 20Ω, t
DR
RRM
RRM
= 67% V
J
d
= T
= 67% V
J
Sinusoidal half wave,
Initial T
DRM
max, V
, dV/dt = 20V/µs linear
DRM
C
I
RM
DRM
= 125°C
@ T
, T
www.irf.com
= 50V,
r
J
/I
= 1µs
= 25°C
C
250
RRM
mA
= 125°C
max.