BT151-650C,127 NXP Semiconductors, BT151-650C,127 Datasheet - Page 3

• Manufacturer Part Number: BT151-650C,127
• Description: THYRISTOR 12A 650V TO-220AB
• Manufacturer: NXP Semiconductors

Specifications of BT151-650C,127

• Package / Case: TO-220AB-3
• Scr Type: Standard Recovery
• Voltage - Off State: 650V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.75V
• Current - On State (it (av)) (max): 7.5A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 15mA
• Current - Hold (ih) (max): 20mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 110A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 12A
• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1776; 934058481127; BT151-650C

Philips Semiconductors
April 2004
Thyristors
15
10
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible rms current I
5
0
15
10
on-state current I
0
5
0
1000
-50
Ptot / W
100
IT(RMS) / A
conduction
angle
degrees
10
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
1
I
T
Tj initial = 25 C max
dI /dt limit
sinusoidal currents, t
form
factor
T
a = form factor = I
a
4
2.8
2.2
1.9
1.57
T
2
0
I TSM
time
100us
3
TSM
4
IT(AV) / A
, versus pulse width t
Tmb / C
BT151
4
T / s
50
2.8
T(RMS)
5
p
1ms
2.2
T(AV)
/ I
10ms.
6
T(AV)
100
Tmb(max) / C
, where
1.9
109 C
.
a = 1.57
tot
7
, versus
mb
T(RMS)
p
, for
.
10ms
8
105.5
112
118.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
mb
BT151 series C
I
T
Tj initial = 25 C max
100
Product specification
1
T
109˚C.
100
I TSM
time
Rev 1.000
1000
150
10
j
.