MCR12DCMT4 ON Semiconductor, MCR12DCMT4 Datasheet - Page 3

• Manufacturer Part Number: MCR12DCMT4
• Description: THYRISTOR SCR 12A 600V DPAK
• Manufacturer: ON Semiconductor

Specifications of MCR12DCMT4

• Scr Type: Standard Recovery
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1V
• Voltage - On State (vtm) (max): 1.9V
• Current - On State (it (av)) (max): 7.8A
• Current - On State (it (rms)) (max): 12A
• Current - Gate Trigger (igt) (max): 20mA
• Current - Hold (ih) (max): 40mA
• Current - Off State (max): 10µA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Current - On State (it (rms) (max): 12A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MCR12DCMT4OSCT

100
125
120
105
100
115
110
Symbol
V
I
V
I
V
I
1.0
0.1
DRM
RRM
H
10
95
90
85
DRM
RRM
TM
0
0
a = Conduction
TYPICAL @ T
Angle
1.0
V
T
Figure 1. Average Current Derating
Figure 3. On−State Characteristics
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
I
T(AV)
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
a
1.0
, AVERAGE ON−STATE CURRENT (AMPS)
2.0
J
a = 30°
= 25°C
MAXIMUM @ T
3.0
2.0
60°
4.0
J
= 25°C
3.0
Voltage Current Characteristic of SCR
5.0
90°
MAXIMUM @ T
120°
6.0
MCR12DCM, MCR12DCN
4.0
J
7.0
= 125°C
http://onsemi.com
180°
dc
8.0
5.0
I
Reverse Avalanche Region
RRM
Anode −
Reverse Blocking Region
3
at V
0.01
RRM
1.0
0.1
8.0
6.0
4.0
2.0
(off state)
16
14
12
10
0
0.1
0
a = Conduction
on state
Figure 4. Transient Thermal Response
1.0
Figure 2. On−State Power Dissipation
Angle
I
T(AV)
1.0
a
a = 30°
+ Current
, AVERAGE ON−STATE CURRENT (AMPS)
2.0
Forward Blocking Region
I
3.0
H
10
t, TIME (ms)
V
TM
(off state)
4.0
60°
I
DRM
100
Z
5.0
qJC(t)
Anode +
at V
90°
= R
DRM
6.0
qJC(t)
1000
+ Voltage
120°
Sr(t)
7.0
180°
dc
10 K
8.0