Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
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Notes:
DS30432 Rev. 5 - 3
Epitaxial Die Construction
Complementary PNP Type Available (BC857BV)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
"Green" Device (Note 5 and 6)
Case: SOT-563
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: K4V, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.003 grams (approximate)
1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
3. No purposefully added lead.
4. Short duration pulse test used to minimize self-heating effect.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
A
= 25°C unless otherwise specified
(Note 2)
(Note 2)
V
V
V
V
Symbol
V
www.diodes.com
(BR)CBO
(BR)CEO
(BR)EBO
C
CE(SAT)
BE(SAT)
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR
I
I
V
E
h
C
CBO
CBO
NF
OBO
f
1
1
FE
BE
T
1 of 3
B
B
K
2
1
Min
200
580
100
Symbol
T
50
45
—
—
—
—
—
—
6
C
K4V YM
E
V
V
V
j
E
R
, T
1
C
1
2
P
2
CBO
CEO
EBO
I
θ JA
C
d
STG
B
B
G
H
A
2
1
See Note 1
D
Typ
290
700
900
660
—
—
—
—
—
—
—
—
—
C
E
2
2
B C
M
Max
450
100
300
700
770
5.0
4.5
—
—
—
—
15
—
10
L
-55 to +150
Value
100
150
833
6.0
Unit
MHz
50
45
mV
mV
mV
nA
µA
pF
dB
—
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
V
f = 1.0kHz, BW = 200Hz
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
CE
= 1μA, I
Dim
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
G
M
A
B
C
D
H
K
L
All Dimensions in mm
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, R
BC847BV
Test Condition
0.15
1.10
1.55
0.90
1.50
0.56
0.10
0.10
C
Min
—
SOT-563
B
B
= 0
B
B
S
C
C
C
A
C
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0kΩ,
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA
© Diodes Incorporated
°C/W
Max
0.30
1.25
1.70
1.10
1.70
0.60
0.30
0.18
Unit
mW
mA
—
°C
V
V
V
BC847BV
0.25
1.20
1.60
0.50
1.00
1.60
0.60
0.20
0.11
Typ