MBT3906DW1T1G ON Semiconductor, MBT3906DW1T1G Datasheet
MBT3906DW1T1G
Specifications of MBT3906DW1T1G
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MBT3906DW1T1G Summary of contents
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... MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) Collector −Base Breakdown Voltage Emitter −Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (I = −0.1 mAdc −1.0 Vdc) ...
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10.6 V 300 ns DUTY CYCLE = 2% Figure 1. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C obo C ibo 3.0 2.0 1.0 0.1 0.2 0.3 ...
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TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...
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TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...