MBT3946DW1T1G ON Semiconductor, MBT3946DW1T1G Datasheet - Page 4

• Manufacturer Part Number: MBT3946DW1T1G
• Description: TRANS DUAL GP 200MA 40V SC88
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 250 MHz at PNP, 300 MHz at NPN
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60/40V
• Emitter-base Voltage: 6/5V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Module Configuration: Dual
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 300MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBT3946DW1T1GOSTR

500
300
200
100
500
300
200
100
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
SOURCE RESISTANCE = 500 W
I
I
C
C
(NPN)
(NPN)
/I
= 100 mA
0.2
B
= 20
SOURCE RESISTANCE = 200 W
I
2.0 3.0
2.0 3.0
C
= 1.0 mA
0.4
I
Figure 5. Turn −On Time
SOURCE RESISTANCE = 200 W
I
Figure 9. Noise Figure
I
I
C
C
C
C
Figure 7. Storage Time
/I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
= 0.5 mA
5.0 7.0
B
1.0
= 10
f, FREQUENCY (kHz)
2.0
10
10
SOURCE RESISTANCE = 1.0 k
I
C
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
= 50 mA
t
d
@ V
4.0
20
OB
20
= 0 V
(V
(NPN)
30
30
10
CE
= 5.0 Vdc, T
t
50
50
I
r
20
C
NOISE FIGURE VARIATIONS
@ V
/I
t′
I
B
70
B1
70
s
= 20
I
I
C
CC
= t
C
= I
/I
40
/I
100
100
2.0 V
B
s
B
B2
= 3.0 V
-
= 10
http://onsemi.com
= 10
15 V
40 V
1
/
8
A
t
100
f
200
200
= 25°C, Bandwidth = 1.0 Hz)
(NPN)
4
500
300
200
100
500
300
200
100
70
50
30
20
10
70
50
30
20
10
14
12
10
7
5
7
5
8
6
4
2
0
1.0
1.0
0.1
(NPN)
(NPN)
f = 1.0 kHz
0.2
2.0 3.0
2.0 3.0
I
0.4
C
= 0.5 mA
R
S
I
I
C
C
Figure 10. Noise Figure
, SOURCE RESISTANCE (k OHMS)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
I
5.0 7.0
5.0 7.0
I
C
Figure 6. Rise Time
C
Figure 8. Fall Time
/I
= 1.0 mA
1.0
B
= 10
10
10
2.0
I
C
/I
4.0
B
20
20
= 20
(NPN)
30
30
10
I
C
50
50
= 100 mA
20
V
I
V
I
70
70
B1
C
CC
CC
I
/I
C
B
= I
100
100
= 50 mA
= 40 V
= 40 V
= 10
40
B2
200
200
100