MBT3946DW1T1G ON Semiconductor, MBT3946DW1T1G Datasheet - Page 8

• Manufacturer Part Number: MBT3946DW1T1G
• Description: TRANS DUAL GP 200MA 40V SC88
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 250 MHz at PNP, 300 MHz at NPN
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60/40V
• Emitter-base Voltage: 6/5V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Module Configuration: Dual
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 300MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBT3946DW1T1GOSTR

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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