NST847BDP6T5G ON Semiconductor, NST847BDP6T5G Datasheet - Page 2
NST847BDP6T5G
Manufacturer Part Number
NST847BDP6T5G
Description
TRANSISTOR NPN DUAL 45V SOT-963
Manufacturer
ON Semiconductor
Datasheet
1.NST847BDP6T5G.pdf
(4 pages)
Specifications of NST847BDP6T5G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-963
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
420 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NST847BDP6T5G
NST847BDP6T5GOSTR
NST847BDP6T5GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NST847BDP6T5G
Manufacturer:
ON Semiconductor
Quantity:
6 000
Company:
Part Number:
NST847BDP6T5G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NST847BDP6T5G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
Collector −Emitter Breakdown Voltage (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain (I
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Input Capacitance (V
Noise Figure
(I
(I
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
C
C
0.0001
= 10 mA, V
= 0.2 mA, V
Figure 1. Collector Emitter Saturation Voltage vs.
I
C
/I
B
= 10
CE
CE
C
I
= 5.0 Vdc, f = 100 MHz)
= 5.0 Vdc, R
C
= 2.0 mA, V
EB
, COLLECTOR CURRENT (A)
(I
CB
(V
C
C
= 0.5 V, f = 1.0 MHz)
Collector Current
0.001
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
CE
S
(I
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
C
C
= 5.0 V)
E
= 10 mA, I
= 100 mA, I
(I
CE
C
= 1.0 mA)
CE
A
C
C
C
C
= 10 mA)
= 150°C)
25°C
= 5.0 V)
(T
= 10 mA, I
= 100 mA, I
= 5.0 V)
V
= 10 mA)
= 10 mA, V
CE(sat)
A
= 25°C unless otherwise noted)
0.01
B
B
= 0.5 mA)
= 150°C
−55°C
= 5.0 mA)
B
EB
B
= 0.5 mA)
= 5.0 mA)
= 0)
http://onsemi.com
0.1
2
600
500
400
300
200
100
0.0001
0
Figure 2. DC Current Gain vs. Collector Current
150°C (5.0 V)
150°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
BE(on)
C
CBO
h
NF
f
obo
FE
ibo
T
I
C
, COLLECTOR CURRENT (A)
0.001
Min
200
580
100
6.0
45
50
50
−
−
−
−
−
−
−
−
−
−
Typ
290
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
0.01
Max
0.25
450
700
770
5.0
0.6
4.5
15
10
10
−
−
−
−
−
−
−
Unit
MHz
mV
nA
mA
dB
pF
pF
V
V
V
V
V
V
−
0.1