BC846BDW1T1G ON Semiconductor, BC846BDW1T1G Datasheet - Page 6

• Manufacturer Part Number: BC846BDW1T1G
• Description: TRANS NPN DUAL 65V 100MA SOT-363
• Manufacturer: ON Semiconductor

Specifications of BC846BDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: NPN
• Number Of Elements: 2
• Collector-emitter Voltage: 65V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 200
• Power Dissipation: 380mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BC846BDW1T1G; BC846BDW1T1GOSTR

1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
10
0.0001
1
0.1
V
T
CE
A
= 25°C
= 5 V
Figure 18. V
I
C
V
Figure 20. Capacitances
, COLLECTOR CURRENT (A)
R
, REVERSE VOLTAGE (V)
0.001
1
C
C
−55°C
150°C
25°C
ob
ib
−0.2
−0.6
−1.4
−1.8
−2.2
−2.6
BE(on)
TYPICAL CHARACTERISTICS − BC847BDW1T1G
−1
−3
0.1
Figure 22. Base−Emitter Temperature Coefficient
at V
V
CE
0.01
CE
q
10
= 5 V
VB
= 5 V
, for V
I
B
, BASE CURRENT (mA)
BE
http://onsemi.com
1
0.1
100
6
−55°C to 150°C
1000
100
1.6
1.2
0.8
0.4
10
2
0
10
0.1
0.01
10 mA
I
V
C
T
CE
A
=
Figure 19. Current − Gain − Bandwidth
Figure 21. Collector Saturation Region
= 25°C
= 10 V
I
C
0.1
, COLLECTOR CURRENT (A)
20 mA
I
I
B
C
, BASE CURRENT (mA)
100
=
1
Product
50 mA
I
C
1
=
100 mA
10
I
C
=
10
T
A
= 25°C
100
100