MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 21

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

Final Product/Process Change Notification #16266
MMSZ5248BT1G
MMSZ5248BT1H
MMSZ5248ET1
MMSZ5248ET1G
MMSZ5249BT1G
MMSZ5250BT1G
MMSZ5250BT1H
MMSZ5250ET1
MMSZ5250ET1G
MMSZ5251BT1G
MMSZ5251ET1G
MMSZ5252BT1
MMSZ5252BT1G
MMSZ5252ET1G
MMSZ5252ET3G
MMSZ5253BT1G
MMSZ5253ET1
MMSZ5254BT1
MMSZ5254BT1G
MMSZ5254BT1H
MMSZ5254ET1
MMSZ5254ET1G
MMSZ5255BT1G
MMSZ5255ET1G
MMSZ5256BT1
MMSZ5256BT1G
MMSZ5256ET1G
MMSZ5257BT1
MMSZ5257BT1G
MMSZ5257ET1
MMSZ5257ET1G
MMSZ5258BT1G
MMSZ5258BT3G
MMSZ5259BT1
MMSZ5259BT1G
MMSZ5259ET1G
MMSZ5260BT1
MMSZ5260BT1G
MMSZ5261BT1
MMSZ5261BT1G
MMSZ5261BT3G
MMSZ5262BT1G
MMSZ5262BT1H
MMSZ5263BT1G
MMSZ5264BT1G
MMSZ5265BT1G
MMSZ5266BT1G
MMSZ5266BT3
MMSZ5267BT1
MMSZ5267BT1G
MMSZ5268BT1G
MMSZ5270BT1G
MMSZ5272BT3G
MMSZ56T1G
MMSZ5V1T1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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