MMDT3946LP4-7 Diodes Inc, MMDT3946LP4-7 Datasheet - Page 3

• Manufacturer Part Number: MMDT3946LP4-7
• Description: TRANS BIPO COMPL NPN/PNP 6-DFN
• Manufacturer: Diodes Inc

Specifications of MMDT3946LP4-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: 6-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

DS30822 Rev. 4 - 2
1,000
100
250
200
150
100
0.1
10
10
50
1
1
0
0.1
0.1
Saturation Voltage vs. Collector Current (NPN-3904)
0
T = -25°C
A
Ambient Temperature (Total Device) (Note 3)
25
I
I
C
B
Fig. 3, Typical DC Current Gain vs
= 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
C
Collector Current (NPN-3904)
A
Fig. 1, Max Power Dissipation vs
T = 125°C
1
A
1
Fig. 5, Typical Base-Emitter
50
T = +25°C
A
75
10
10
100 125
100
100
150
V
CE
= 1.0V
175
1,000
1,000
200
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0.01
0.1
1
Saturation Voltage vs. Collector Current (NPN-3904)
0.1
I
I
C
B
Fig. 2, Typical Output Capacitance
= 10
Fig. 6, Typical Output Capacitance
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Typical Collector-Emitter
Characteristics (NPN-3904)
Characteristics (PNP-3906)
1
10
f = 1MHz
f = 1MHz
100
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MMDT3946LP
1,000