BC817DPN,115 NXP Semiconductors, BC817DPN,115 Datasheet - Page 7

• Manufacturer Part Number: BC817DPN,115
• Description: TRANSISTOR NPN 500MA 45V SOT457
• Manufacturer: NXP Semiconductors

Specifications of BC817DPN,115

• Package / Case: SC-74-6
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 600mW
• Frequency - Transition: 100MHz, 80MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 600 mW
• Maximum Operating Frequency: 100 MHz at NPN, 80 MHz at PNP
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057320115; BC817DPN T/R; BC817DPN T/R

NXP Semiconductors
2002 Nov 22
handbook, halfpage
NPN/PNP general purpose transistor
V CEsat
TR2 (PNP) I
(1) T
(2) T
(3) T
Fig.8
(mV)
−10
−10
−10
−1
−10
amb
amb
amb
3
2
−1
= 150 °C.
= 25 °C.
= −55 °C.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
/I
B
= 10.
−1
−10
(1)
(2)
(3)
−10
2
I C (mA)
MHC326
−10
3
7
handbook, halfpage
TR2 (PNP) V
(1) T
(2) T
(3) T
Fig.9
(mV)
V BE
−1200
−1000
−800
−600
−400
−200
amb
amb
amb
−10
−1
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
CE
= −1 V.
−1
(1)
(2)
(3)
−10
−10
BC817DPN
Product data sheet
2
I C (mA)
MHC327
−10
3