BC 857S E6433 Infineon Technologies, BC 857S E6433 Datasheet - Page 6
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BC 857S E6433
Manufacturer Part Number
BC 857S E6433
Description
TRANSISTOR PNP AF 45V SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BC_856S_E6327.pdf
(10 pages)
Specifications of BC 857S E6433
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage Vceo Max
45 V
Continuous Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BC857SE6433XT
SP000010667
SP000010667
Transition frequency f
V
Total power dissipation P
BC856S, BC857S
f
T
CE
MHz
mW
10
10
10
300
250
225
200
175
150
125
100
5
5
= 5 V
75
50
25
3
2
1
10
0
0
-1
15
30
5
45
10
0
60
T
75
= ƒ(I
5
90 105 120 °C
tot
10
= ƒ(T
C
1
)
S
EHP00378
mA
Ι
)
C
T
S
10
150
2
6
Collector-base capacitance C
Emitter-base capacitance C
Total power dissipation P
BC856U
mW
pF
300
250
225
200
175
150
125
100
12
10
75
50
25
9
8
7
6
5
4
3
2
1
0
0
0
0
15
4
30
45
8
BC856S/U_BC857S
CEB
60
75
12
90 105 120 °C
tot
eb
= ƒ(T
16
cb
2008-01-18
= ƒ(V
= ƒ(V
S
V
)
V
T
EB
CB
S
CCB
CB
)
(V
150
22
)
EB
)