HN1B01FDW1T1G ON Semiconductor, HN1B01FDW1T1G Datasheet - Page 4

• Manufacturer Part Number: HN1B01FDW1T1G
• Description: TRANS BR NPN/PNP DUAL 60V SC74-6
• Manufacturer: ON Semiconductor

Specifications of HN1B01FDW1T1G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 2µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 6V
• Power - Max: 380mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: HN1B01FDW1T1GOS

1000
100
10
160
120
280
240
200
0.1
80
40
10
0
1
1
1
0
6.0 mA
T
V
A
CE
−25 C
= 100 C
25 C
Figure 7. Collector Saturation Voltage
5.0 mA
V
= 6.0 V
CE
1
I
, COLLECTOR−EMITTER VOLTAGE (V)
C
Figure 9. DC Current Gain
Figure 11. V
I
, COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
10
3.0 mA
10
2
T
A
BE(sat)
Typical Electrical Characteristics: NPN Transistor
= 25 C
3
versus I
100
100
4
2.0 mA
T
I
C
C
I
A
B
/I
= 25 C
B
= 0.2 mA
5
= 10
HN1B01FDW1T1
1.0 mA
0.5 mA
http://onsemi.com
1000
1000
6
4
10,000
1000
1000
0.01
100
100
0.1
0.1
10
10
1
1
1
1
0
COMMON EMITTER
V
CE
T
V
I
0.1
A
C
CE
= 6 V
−25 C
/I
= 100 C
25 C
B
= 1.0 V
Figure 12. Base−Emitter Voltage
= 10
0.2
V
Figure 10. V
I
I
BE
C
C
Figure 8. DC Current Gain
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, BASE−EMITTER VOLTAGE (V)
0.3
10
10
0.4
25 C
CE(sat)
0.5
T
T
A
A
= 100 C
0.6
= 100 C
versus I
100
100
0.7
−25 C
C
0.8
25 C
−25 C
0.9
1000
1000
1