BC847BDW1T1G ON Semiconductor, BC847BDW1T1G Datasheet - Page 2
BC847BDW1T1G
Manufacturer Part Number
BC847BDW1T1G
Description
TRANS NPN DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.BC846BDW1T1G.pdf
(10 pages)
Specifications of BC847BDW1T1G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
6V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
200
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BC847BDW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC847BDW1T1G
Manufacturer:
ON Semiconductor
Quantity:
88 723
Company:
Part Number:
BC847BDW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC847BDW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
= 1.0 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, V
= 0.2 mA, V
EB
CE
CE
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 Vdc, R
(I
CB
(V
C
C
CB
= 2.0 mA, V
= 10 V, f = 1.0 MHz)
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
S
(I
BC846B, BC847B,
BC846B, BC847B,
BC847C, BC848C
BC847C, BC848C
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
C
C
= 10 mA, I
= 100 mA, I
(I
CE
CE
A
C
C
= 150°C)
(T
= 5.0 V)
= 10 mA, I
= 100 mA, I
= 5.0 V)
A
= 25°C unless otherwise noted)
B
B
= 0.5 mA)
= 5.0 mA)
B
B
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
= 0.5 mA)
= 5.0 mA)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
C
I
BE(sat)
BE(on)
CBO
h
NF
f
obo
FE
T
Min
200
420
580
100
6.0
6.0
5.0
65
45
30
80
50
30
80
50
30
−
−
−
−
−
−
−
−
−
−
−
Typ
150
270
290
520
660
0.7
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
450
800
700
770
5.0
0.6
4.5
15
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
MHz
mV
nA
dB
mA
pF
V
V
V
V
V
V
−