BC858CDXV6T1G ON Semiconductor, BC858CDXV6T1G Datasheet - Page 3

• Manufacturer Part Number: BC858CDXV6T1G
• Description: TRANS PNP DUAL 30V 100MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of BC858CDXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

−2.0
−1.6
−1.2
−0.8
−0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
−0.4
−0.2
I
−10 mA
−0.02
−0.6
C
V
T
=
A
CE
−0.5 −1.0 −2.0
Figure 1. Normalized DC Current Gain
Figure 3. Collector Saturation Region
= 25°C
= −10 V
−1.0
I
C
V
Figure 5. Capacitances
−0.1
, COLLECTOR CURRENT (mAdc)
I
R
C
, REVERSE VOLTAGE (VOLTS)
= −20 mA
−2.0
I
B
, BASE CURRENT (mA)
I
−5.0 −10
C
−4.0 −6.0
C
= −50 mA
ib
C
−1.0
ob
BC858CDXV6T1, BC858CDXV6T5
−20
T
−10
A
= 25°C
TYPICAL CHARACTERISTICS
T
I
C
I
A
C
= −200 mA
= 25°C
−50 −100 −200
= −100 mA
−20 −30 −40
http://onsemi.com
−10
−20
3
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
400
300
200
100
150
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
−0.5
−0.1 −0.2
Figure 4. Base−Emitter Temperature Coefficient
T
Figure 6. Current−Gain − Bandwidth Product
A
−0.2
Figure 2. “Saturation” and “On” Voltages
= 25°C
−55°C to +125°C
−1.0
−0.5 −1.0 −2.0
I
I
C
C
I
−2.0 −3.0
, COLLECTOR CURRENT (mAdc)
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
V
−1.0
V
V
BE(on)
CE(sat)
BE(sat)
@ V
@ I
@ I
−5.0
CE
C
C
/I
/I
B
B
= −10 V
= 10
−5.0
= 10
−10
−10
−10 −20
−20 −30
V
T
A
CE
= 25°C
= −10 V
−50 −100
−100
−50