NST3906DXV6T1G ON Semiconductor, NST3906DXV6T1G Datasheet - Page 2

• Manufacturer Part Number: NST3906DXV6T1G
• Description: TRANS PNP DUAL 200MA 40V SOT563
• Manufacturer: ON Semiconductor

Specifications of NST3906DXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3906DXV6T1GOS; NST3906DXV6T1GOS; NST3906DXV6T1GOSTR

2. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL- SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector - Emitter Breakdown Voltage (Note 2)
Collector - Base Breakdown Voltage
Emitter - Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Current - Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small - Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
= -0.1 mAdc, V
= -1.0 mAdc, V
= -10 mAdc, V
= -50 mAdc, V
= -100 mAdc, V
= -10 mAdc, I
= -50 mAdc, I
= -10 mAdc, I
= -50 mAdc, I
= -10 Vdc, I
= -10 Vdc, I
= -10 Vdc, I
= -10 Vdc, I
= -5.0 Vdc, I
B
B
B
B
C
C
C
C
CE
CE
C
CE
CE
= -1.0 mAdc)
= -5.0 mAdc)
= -1.0 mAdc)
= -5.0 mAdc)
CE
= -1.0 mAdc, f = 1.0 kHz)
= -1.0 mAdc, f = 1.0 kHz)
= -1.0 mAdc, f = 1.0 kHz)
= -1.0 mAdc, f = 1.0 kHz)
= -100 mAdc, R
= -1.0 Vdc)
= -1.0 Vdc)
(V
(I
(V
(I
= -1.0 Vdc)
= -1.0 Vdc)
= -1.0 Vdc)
C
B1
CC
CC
= -10 mAdc, I
300 s; Duty Cycle
= I
(Note 2)
= -3.0 Vdc, V
= -3.0 Vdc, I
B2
= -1.0 mAdc)
Characteristic
S
= 1.0 k , f = 1.0 kHz)
NST3906DXV6T1, NST3906DXV6T5
(T
B1
C
A
BE
= -1.0 mAdc)
= -10 mAdc)
= 25 C unless otherwise noted)
= 0.5 Vdc)
2.0%.
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
h
I
CEX
h
NF
h
h
BL
f
obo
FE
ibo
oe
T
re
fe
ie
t
t
t
t
d
s
r
f
-0.65
-5.0
Min
-40
-40
100
250
100
2.0
0.1
3.0
60
80
60
30
-
-
-
-
-
-
-
-
-
-
-
-
-0.25
-0.85
-0.95
Max
-0.4
10.0
-50
-50
300
400
4.5
4.0
12
10
60
-
-
-
-
-
-
-
-
225
35
35
75
X 10
mmhos
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
k
dB
pF
pF
-
-
ns
ns
ns
ns
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