NST3906DP6T5G ON Semiconductor, NST3906DP6T5G Datasheet - Page 3

• Manufacturer Part Number: NST3906DP6T5G
• Description: TRANSISTOR PNP DUAL GP SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST3906DP6T5G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
I
25°C
C
/I
B
= 10
Figure 5. Saturation Region
I
0.001
C
, COLLECTOR CURRENT (A)
I
b
I
C
Collector Current
, BASE CURRENT (A)
= 10 mA
20 mA
0.001
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.01
0
5.0
V
cb
0.1
Figure 7. Output Capacitance
100 mA
, COLLECTOR BASE VOLTAGE (V)
C
ob
http://onsemi.com
10
80 mA
60 mA
40 mA
0.01
1
15
3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
9.0
8.0
7.0
6.0
5.0
4.0
3.0
20
0.0001
0
150°C
−55°C
25°C
Figure 4. Base Emitter Turn−On Voltage vs.
V
0.5
CE
= 2.0 V
25
1.0
V
0.001
Figure 6. Input Capacitance
eb
I
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
1.5
30
Collector Current
2.0
C
ib
0.01
2.5
3.0
3.5
0.1
4.0
4.5
5.0
1