NST3946DP6T5G ON Semiconductor, NST3946DP6T5G Datasheet - Page 4

• Manufacturer Part Number: NST3946DP6T5G
• Description: TRANSISTOR DUAL COMPL GP SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST3946DP6T5G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 200MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.0001
0.0001
150°C
Figure 3. Base Emitter Saturation Voltage vs.
−55°C
I
25°C
C
/I
20 mA
B
= 10
Figure 5. Saturation Region
I
0.001
C
40 mA
, COLLECTOR CURRENT (A)
I
80 mA
b
Collector Current
, BASE CURRENT (A)
60 mA
0.001
3.0
2.5
2.0
1.5
1.0
0.5
0.01
I
C
0
= 100 mA
5.0
V
cb
Figure 7. Output Capacitance
0.1
, COLLECTOR BASE VOLTAGE (V)
NPN TRANSISTOR
http://onsemi.com
10
C
ob
0.01
1
15
4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
20
0
0.0001
150°C
−55°C
25°C
Figure 4. Base Emitter Turn−On Voltage vs.
V
0.5
CE
= 2.0 V
25
1.0
V
0.001
eb
Figure 6. Input Capacitance
I
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
1.5
30
Collector Current
C
ib
2.0
0.01
2.5
3.0
3.5
0.1
4.0
4.5
5.0
1