NST30010MXV6T1G ON Semiconductor, NST30010MXV6T1G Datasheet - Page 3

• Manufacturer Part Number: NST30010MXV6T1G
• Description: TRANSISTOR PNP DUAL PAIR SOT-563
• Manufacturer: ON Semiconductor

Specifications of NST30010MXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST30010MXV6T1G; NST30010MXV6T1GOSTR

1400
1200
1000
800
600
400
200
0.25
0.20
0.15
0.10
0.05
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
0
0.1
0
150°C (2.0 V)
Figure 1. Collector Emitter Saturation Voltage
0.1
25°C (5.0 V)
25°C (2.0 V)
Figure 5. Base Emitter Turn−On Voltage vs.
Figure 3. DC Current Gain vs. Collector
I
C
/I
150°C (5.0 V)
B
= 10
I
C
I
C
I
, COLLECTOR CURRENT (mA)
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
vs. Collector Current
1.0
Collector Current
1.0
1.0
−55°C (5.0 V)
−55°C (2.0 V)
−55°C
150°C
25°C
Current
10
10
10
TYPICAL CHARACTERISTICS
V
25°C
CE
NST30010MXV6T1G
= −5.0 V
http://onsemi.com
150°C
−55°C
100
100
100
3
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
0.1
0.1
0.01
10 mA
Figure 2. Collector Emitter Saturation Voltage
Figure 4. Base Emitter Saturation Voltage vs.
I
C
I
C
/I
/I
B
B
= 100
Figure 6. Saturation Region @ 255C
= 10
I
I
C
C
0.1
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
I
vs. Collector Current
B
, BASE CURRENT (mA)
1.0
1.0
Collector Current
50 mA
20 mA
1.0
I
C
= 100 mA
10
10
−55°C
25°C
150°C
25°C
10
150°C
−55°C
100
100
100