LM3046N National Semiconductor, LM3046N Datasheet - Page 2

• Manufacturer Part Number: LM3046N
• Description: IC TRANSISTOR ARRAY 14-DIP
• Manufacturer: National Semiconductor

Specifications of LM3046N

• Transistor Type: 5 NPN
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 230mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1mA, 3V
• Power - Max: 750mW
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: *LM3046N; CA3046; LM3046

Collector to Base Breakdown Voltage (V
Collector to Emitter Breakdown Voltage (V
Collector to Substrate Breakdown
Voltage (V
Emitter to Base Breakdown Voltage (V
Collector Cutoff Current (I
Collector Cutoff Current (I
Static Forward Current Transfer
Ratio (Static Beta) (h
Input Offset Current for Matched
Pair Q
Base to Emitter Voltage (V
Magnitude of Input Offset Voltage for
Differential Pair
Magnitude of Input Offset Voltage for Isolated
Transistors
Temperature Coefficient of Base to
Emitter Voltage
Collector to Emitter Saturation Voltage (V
Temperature Coefficient of
Input Offset Voltage
l
V
Absolute Maximum Ratings
If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office
Distributors for availability and specifications
Power Dissipation
Collector to Emitter Voltage V
Collector to Base Voltage V
Collector to Substrate Voltage V
Emitter to Base Voltage V
Collector Current I
Operating Temperature Range
Storage Temperature Range
Soldering Information
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices
Electrical Characteristics
Note 1 The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
BE5
T
T
T
T
T
Dual-In-Line Package Soldering (10 Sec )
Small Outline Package
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
A
A
A l
A
A l
1
b
e
e
e
and Q
V
55 C
75 C
25 C
25 C to 55 C
25 C to 75 C
(BR)CIO
BE3
l
V
2
BE3
l
l
l
I
V
O1
)
BE1
b
Parameter
b
V
C
FE
V
BE
T
b
BE4
I
)
IO2
V
V
CBO
CEO
T
l l
10
l
BE
BE2
EBO
V
)
)
)
BE4
CBO
l
CEO
b
CIO
V
(BR)EBO
BE5
(Note 1)
(BR)CBO
CE(SAT)
l
(BR)CEO
(T
)
A
)
)
(T
e
) I
A
25 C unless otherwise specified)
e
I
I
I
V
V
V
V
V
V
V
V
I
V
Transistor
C
C
C
E
B
CB
CE
CE
CE
CE
CE
CE
CE
CE
10 A I
25 C)
e
e
e
e
260 C
Each
300
300
e
e
e
e
e
e
e
e
e
b
b
15
20
20
50
10 A I
1 mA I
10 A I
1 mA I
5
55 C to
65 C to
Conditions
10V I
10V I
3V
3V I
3V
3V I
3V I
3V I
3V I
Derate at 8
LM3045
C
2
C
C
C
C
C
B
e
C
E
CI
E
B
e
e
e
e
e
I
I
e
e
I
I
I
E
E
a
a
e
0
e
e
C
C
C
e
1 mA
e
e
1 mA
1 mA
1 mA
1 mA
0
10 mA
125 C
150 C
e
e
e
0
0
0
Package
0
1 mA
10 mA
Total
10 mA
1 mA
10 A
750
750
Min
20
15
20
40
LM3045 LM3046
5
Transistor
0 002
0 715
0 800
b
Limits
0 45
0 45
0 23
Typ
100
100
0 3
1 1
60
24
60
54
260 C
215 C
220 C
7
1 9
Each
300
300
LM3046 LM3086
15
20
20
50
b
b
5
Derate at 6 67
40 C to
65 C to
Max
0 5
40
2
5
5
a
a
Min
20
15
20
40
85 C
85 C
5
Package
Total
750
750
LM3086
Limits
0 002
0 715
0 800
b
0 23
Typ
100
100
60
24
60
54
7
1 9
Max
100
5
mW C
mW C
Units
mW
mW
mW
mA
mV C
V
V
V
V
Units
mV
mV
V C
nA
V
V
V
V
V
V
A
A