MBT3906DW1T1 ON Semiconductor, MBT3906DW1T1 Datasheet - Page 2

• Manufacturer Part Number: MBT3906DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3906DW1T1

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3906DW1T1OSCT

2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
= −0.1 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −50 mAdc, V
= −100 mAdc, V
= −10 mAdc, I
= −50 mAdc, I
= −10 mAdc, I
= −50 mAdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −10 Vdc, I
= −5.0 Vdc, I
B
B
B
B
C
C
C
C
CE
CE
C
CE
CE
= −1.0 mAdc)
= −5.0 mAdc)
= −1.0 mAdc)
= −5.0 mAdc)
CE
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −1.0 mAdc, f = 1.0 kHz)
= −100 mAdc, R
(V
(I
(V
(I
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
C
B1
= −1.0 Vdc)
CC
CC
= −10 mAdc, I
= I
(Note 2)
= −3.0 Vdc, V
= −3.0 Vdc, I
B2
= −1.0 mAdc)
Characteristic
S
= 1.0 k W, f = 1.0 kHz)
B1
(T
C
BE
A
= −1.0 mAdc)
= −10 mAdc)
= 25°C unless otherwise noted)
= 0.5 Vdc)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
h
I
CEX
h
NF
h
h
BL
f
t
t
obo
t
FE
ibo
t
oe
T
ie
re
fe
d
s
r
f
−0.65
−5.0
Min
−40
−40
100
250
100
2.0
0.1
3.0
60
80
60
30
−
−
−
−
−
−
−
−
−
−
−
−
−0.25
−0.85
−0.95
Max
−0.4
10.0
−50
−50
300
400
225
4.5
4.0
12
10
60
35
35
75
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
kW
dB
pF
pF
ns
ns
−
−
− 4