NST3906DXV6T1 ON Semiconductor, NST3906DXV6T1 Datasheet - Page 7
NST3906DXV6T1
Manufacturer Part Number
NST3906DXV6T1
Description
TRANS PNP DUAL 200MA 40V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NST3906DXV6T1G.pdf
(8 pages)
Specifications of NST3906DXV6T1
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
500mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
NST3906DXV6T1OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NST3906DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
2 300
Company:
Part Number:
NST3906DXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NST3906DXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
6
1
G
-X-
A
STYLE 1:
5
2
PIN 1. EMITTER 1
4
3
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
D
0.08 (0.003)
-Y-
6 5 PL
NST3906DXV6T1, NST3906DXV6T5
B
M
STYLE 2:
PIN 1. EMITTER 1
PACKAGE DIMENSIONS
X
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
Y
http://onsemi.com
SOT-563, 6 LEAD
CASE 463A-01
C
ISSUE O
7
S
STYLE 3:
J
K
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
NOTES:
STYLE 4:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
PIN 1. COLLECTOR
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
K
S
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
J
MILLIMETERS
MIN
1.50
1.10
0.50
0.17
0.08
0.10
1.50
0.50 BSC
MAX
1.70
1.30
0.60
0.27
0.18
0.30
1.70
0.059
0.043
0.020
0.007
0.003
0.004
0.059
MIN
0.020 BSC
INCHES
MAX
0.067
0.051
0.024
0.011
0.007
0.012
0.067