BC847BPDXV6T1 ON Semiconductor, BC847BPDXV6T1 Datasheet - Page 2

TRANS NPN/PNP DUAL LP 45V SOT563

BC847BPDXV6T1

Manufacturer Part Number
BC847BPDXV6T1
Description
TRANS NPN/PNP DUAL LP 45V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC847BPDXV6T1

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
BC847BPDXV6T1OS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BPDXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
2 050
Part Number:
BC847BPDXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BC847BPDXV6T1G
Quantity:
8 000
ELECTRICAL CHARACTERISTICS (NPN)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
= 1.0 mA)
= 10 mA)
= 10 μA, V
= 10 mA)
= 10 μA, V
= 2.0 mA, V
= 10 mA, V
= 0.2 mA, V
EB
CE
CE
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 Vdc, R
(I
CB
(V
C
C
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
S
(I
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
C
C
= 10 mA, I
= 100 mA, I
(I
CE
CE
A
C
C
BC847BPDXV6T1, BC847BPDXV6T5
= 150°C)
= 5.0 V)
= 10 mA, I
= 100 mA, I
= 5.0 V)
B
(T
B
= 0.5 mA)
A
= 5.0 mA)
B
= 25°C unless otherwise noted)
B
= 0.5 mA)
= 5.0 mA)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
C
I
BE(sat)
BE(on)
CBO
h
NF
f
obo
FE
T
Min
200
580
100
6.0
45
50
50
Typ
150
290
660
0.7
0.9
Max
0.25
475
700
770
5.0
0.6
4.5
15
10
MHz
Unit
mV
nA
μA
dB
pF
V
V
V
V
V
V

Related parts for BC847BPDXV6T1