SI8233AB-C-IS Silicon Laboratories Inc, SI8233AB-C-IS Datasheet - Page 15

• Manufacturer Part Number: SI8233AB-C-IS
• Description: 2.5KV 4A HIGH SIDE/LOW SIDE ISOLATED DRIVER ("ISODRIVER"), D
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8233AB-C-IS

• Configuration: High and Low Side, Independent
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 4
• High Side Voltage - Max (bootstrap): 1500V
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.50mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Functional Description
The operation of an Si823x channel is analogous to that of an opto coupler and gate driver, except an RF carrier is
modulated instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si823x channel is shown in
Figure 8.
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 9 for more details.
A
Transmitter
control
Dead
time
OSCILLATOR
MODULATOR
Figure 8. Simplified Channel Diagram
RF
Figure 9. Modulation Scheme
Semiconductor-
Based Isolation
Barrier
Rev. 1.1
DEMODULATOR
Receiver
Modulation Signal
Output Signal
Input Signal
Driver
Gnd
V
DD
Si823x
0.5 to 4 A
peak
B
15