NSBC114EPDXV6T1G ON Semiconductor, NSBC114EPDXV6T1G Datasheet

TRANS BR NPN/PNP DUAL 50V SOT563

NSBC114EPDXV6T1G

Manufacturer Part Number
NSBC114EPDXV6T1G
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC114EPDXV6T1G

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC114EPDXV6T1GOS
NSBC114EPDXV6T1GOS
NSBC114EPDXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSBC114EPDXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
1 800
Part Number:
NSBC114EPDXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NSBC114EPDXV6T1G
Manufacturer:
ON
Quantity:
9 824
NSBC114EPDXV6T1G,
NSBC114EPDXV6T5G
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EPDXV6T1
series, two complementary BRT devices are housed in the SOT−563
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
MAXIMUM RATINGS
and Q
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 5
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Device Dissipation
T
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Total Device Dissipation
T
Derate above 25°C (Note 1)
Thermal Resistance (Note 1)
Junction-to-Ambient
Junction and Storage Temperature
The BRT (Bias Resistor Transistor) contains a single transistor with
A
A
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
These are Pb−Free Devices
= 25°C (Note 1)
= 25°C (Note 1)
2
(Both Junctions Heated)
, − minus sign for Q
(One Junction Heated)
Characteristic
Characteristic
Rating
(T
1
A
(PNP) omitted)
= 25°C unless otherwise noted, common for Q
Symbol
Symbol
Symbol
T
V
V
R
R
J
P
P
CBO
CEO
, T
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
Max
100
357
350
500
250
2.9
4.0
50
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
mW
mW
°C
1
NSBC114EPDXV6T1G
NSBC114EPDXV6T5G
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
DEVICE MARKING INFORMATION
Device
xx = Specific Device Code
M = Date Code
G
ORDERING INFORMATION
(3)
(4)
Q
MARKING DIAGRAM
1
= Pb−Free Package
http://onsemi.com
(see table on page 2)
R
2
CASE 463A
6
SOT−563
PLASTIC
xx MG
Package
SOT−563
SOT−563
(5)
R
G
1
Publication Order Number:
R
(2)
1
1
NSBC114EPDXV6/D
R
2
4000/Tape & Reel
8000/Tape & Reel
4 mm pitch
2 mm pitch
Shipping
Q
(1)
(6)
2

Related parts for NSBC114EPDXV6T1G

NSBC114EPDXV6T1G Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping SOT−563 4 mm pitch NSBC114EPDXV6T1G 4000/Tape & Reel SOT−563 2 mm pitch NSBC114EPDXV6T5G 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

... I E CBO = CEO NSBC114EPDXV6T1G I EBO NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G = 0) V (BR)CBO E = 2.0 mA (BR)CEO NSBC114EPDXV6T1G h FE NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G http://onsemi.com 2 R1 (kW) R2 (kW ∞ 4.7 ∞ 1.0 1 ...

Page 3

... NSBC123EPDXV6T1G NSBC114TPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G V OL NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G NSBC144EPDXV6T1G V OH NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC143TPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G NSBC113EPDXV6T1G NSBC114TPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G http://onsemi.com 3 Min Typ Max Unit Vdc − − 0.25 − ...

Page 4

... Q , − minus sign for Q (PNP) omitted Symbol NSBC114EPDXV6T1G R1 NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G R1/R2 NSBC114EPDXV6T1G NSBC124EPDXV6T1G NSBC144EPDXV6T1G NSBC114YPDXV6T1G NSBC114TPDXV6T1G NSBC143TPDXV6T1G NSBC113EPDXV6T1G NSBC123EPDXV6T1G NSBC143EPDXV6T1G NSBC143ZPDXV6T1G NSBC124XPDXV6T1G NSBC123JPDXV6T1G R = 490°C/W qJA 0 50 100 T , AMBIENT TEMPERATURE (°C) A Figure 1 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 42. DC Current Gain − PNP TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 1000 100 1 COLLECTOR CURRENT (mA) C Figure 44. DC ...

Page 14

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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