NSBC114EDXV6T1G ON Semiconductor, NSBC114EDXV6T1G Datasheet - Page 4
NSBC114EDXV6T1G
Manufacturer Part Number
NSBC114EDXV6T1G
Description
TRANS BRT NPN DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSBC143ZDXV6T1G.pdf
(9 pages)
Specifications of NSBC114EDXV6T1G
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBC114EDXV6T1GOS
NSBC114EDXV6T1GOS
NSBC114EDXV6T1GOSTR
NSBC114EDXV6T1GOS
NSBC114EDXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NSBC114EDXV6T1, NSBC114EDXV6T5
300
250
200
150
100
R
= 833°C/W
50
qJA
0
−50
0
50
100
150
T
, AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
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