MT46V16M16CY-6 IT:K TR Micron Technology Inc, MT46V16M16CY-6 IT:K TR Datasheet - Page 77
![DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA T/R](/photos/31/34/313422/mfg557-60-fbga_sml.jpg)
MT46V16M16CY-6 IT:K TR
Manufacturer Part Number
MT46V16M16CY-6 IT:K TR
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.5V 60-Pin FBGA T/R
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16CY-5BK_TR.pdf
(93 pages)
Specifications of MT46V16M16CY-6 IT:K TR
Density
256 Mb
Maximum Clock Rate
333 MHz
Package
60FBGA
Address Bus Width
15 Bit
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
-40 to 85 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
220mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 39:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
t DQSS (NOM)
Command
Consecutive WRITE-to-WRITE
Address
DQS
CK#
DM
Notes:
DQ
CK
WRITE
Bank,
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
Col b
T0
t DQSS
NOP
DI
T1
b
T1n
WRITE
Bank,
Col n
T2
75
T2n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T3
DI
n
T3n
Transitioning Data
256Mb: x4, x8, x16 DDR SDRAM
NOP
T4
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
NOP
Don’t Care
Operations
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