UP0439000L Panasonic - SSG, UP0439000L Datasheet - Page 2

• Manufacturer Part Number: UP0439000L
• Description: TRANS ARRAY NPN/NPN SS MINI-6P
• Manufacturer: Panasonic - SSG

Specifications of UP0439000L

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz, 80MHz
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SSMini6-F1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UP0439000LTR

UP04390
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Common characteristics chart
Characteristics charts of Tr1
120
140
120
100
140
100
80
60
40
20
80
60
40
20
0
0
0
0
0.5 mA
Collector-emitter voltage V
Ambient temperature T
0.6 mA
20
2
0.7 mA
Parameter
40
4
I
P
C
0.8 mA
T
60
 V
 T
6
80
0.9 mA
CE
a
8
100
I
T
B
a
a
= 1.0 mA
0.2 mA
0.1 mA
0.4 mA
0.3 mA
= 25°C
CE
(°C)
10
120
(V)
140
12
Symbol
V
R
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
1
f
CBO
CEO
FE
OH
OL
/R
T
1
0.001
0.01
100
2
0.1
10
1
0.1
I
I
V
V
V
V
I
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CB
Collector current I
= −10 µA, I
= −2 mA, I
= −10 mA, I
a
T
a
SJJ00288BED
= 25°C ± 3°C
= −50 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= 85°C
V
1
CE(sat)
25°C
−25°C
Conditions
B
C
E
E
B
B
B
B
C
E
= 0
= 0
 I
= 0
= 1 mA, f = 200MHz
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
10
C
C
(mA)
I
C
/I
B
= 10
L
100
L
= 1 kΩ
= 1 kΩ
350
300
250
200
150
100
50
−30%
0
−4.9
0.17
Min
−50
−50
1
80
V
CE
Collector current I
= 10 V
0.21
Typ
10
80
h
FE
10
 I
− 0.25
+30%
− 0.1
− 0.5
− 0.2
− 0.2
Max
0.25
C
C
T
−25°C
a
25°C
(mA)
= 85°C
MHz
Unit
mA
µA
µA
kΩ


V
V
V
V
V
100