M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet - Page 20

• Manufacturer Part Number: M29W160EB7AN6E
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 70ns 48-Pin TSOP Tray
• Manufacturer: NUMONYX

Specifications of M29W160EB7AN6E

• Package: 48TSOP
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Bottom
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 2|16KByte x 1|32KByte x 1|64KByte x 31
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

M29W160ET, M29W160EB
Figure 8. Data Polling Flowchart
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
Table 8. Absolute Maximum Ratings
Note: 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
20/42
Symbol
2. Maximum voltage may overshoot to V
T
T
V
V
V
BIAS
STG
CC
IO
ID
at VALID ADDRESS
at VALID ADDRESS
NO
READ DQ5 & DQ7
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Identification Voltage
READ DQ7
START
DATA
DATA
DQ7
DQ5
DQ7
FAIL
= 1
=
=
YES
NO
NO
YES
YES
CC
PASS
(1,2)
+2V during transition and for less than 20ns during transitions.
Parameter
AI03598
Figure 9. Data Toggle Flowchart
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Refer also to the Numonyx SURE Pro-
gram and other relevant quality documents.
NO
DQ5 & DQ6
READ DQ6
READ DQ6
TOGGLE
TOGGLE
START
TWICE
–0.6
–0.6
–0.6
Min
READ
–50
–65
DQ6
DQ5
DQ6
FAIL
= 1
=
=
YES
YES
YES
NO
NO
V
CC
Max
13.5
125
150
4
+0.6
PASS
AI01370C
Unit
°C
°C
V
V
V