HL6323MG-A Opnext, HL6323MG-A Datasheet

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HL6323MG-A

Manufacturer Part Number
HL6323MG-A
Description
Laser Diode MQW-LD 642nm 35mW 3-Pin
Manufacturer
Opnext
Type
MQW-LDr
Datasheet

Specifications of HL6323MG-A

Maximum Optical Output Power
35 mW
Maximum Optical Output Power Range
5 to 50 mW
Maximum Operating Current
130 mA
Laser Reverse Voltage
2 V
Photodiode Reverse Voltage
30 V
Wavelength
642 nm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HL6323MG-A
Manufacturer:
PANASONIC
Quantity:
34 000
HL6323MG
AlGaInP Laser Diodes
Description
The HL6323MG is a 0.63 μm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small.
Features
• High output power: 35 mW (CW)
• Visible light output: λp = 639 nm Typ
• Small package: φ5.6 mm
• TM mode oscillation
• Single longitudinal mode
Absolute Maximum Ratings
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Notes: 1. This value is not the same as the specification for long term reliability, such as lifetime.
Optical and Electrical Characteristics
Threshold current
Slope efficiency
Operating current
Operating voltage
Beam divergence parallel to
the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
Rev.0 Aug. 01, 2008 page 1 of 4
2. Pulse condition : Pulse width pw = 100 ns , duty = 20%
Item
Item
Ith
ηs
I
V
θ//
θ⊥
λp
I
OP
S
Symbol
OP
P
P
V
V
Topr
Tstg
O
O(pulse)
R(LD)
R(PD)
0.05
Min
635
0.4
30
26
7
Symbol
0.15
Typ
639
0.6
2.3
8.5
45
95
30
Pakage Type
HL6323MG: MG
Max
0.25
130
642
0.9
2.8
65
11
34
–10 to +50
–40 to +85
Ratings
35 *
50 *
30
2
mW/mA
1
2
Unit
mA
mA
nm
mA
V
°
°
18(mW) / (I
P
P
P
P
P
P
O
O
O
O
O
O
PD
= 30 mW
= 30 mW
= 30 mW
= 30 mW
= 30 mW
= 30 mW, V
Test Condition
Internal Circuit
ODE2013-00 (M)
1
Aug. 01, 2008
2
(24mW)
(T
Unit
(T
mW
mW
°C
°C
R(PD)
3
V
V
C
C
– I
LD
= 25°C)
= 25°C)
Rev.0
(6mW)
= 5 V
)

Related parts for HL6323MG-A

HL6323MG-A Summary of contents

Page 1

... AlGaInP Laser Diodes Description The HL6323MG is a 0.63 μm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small. ...

Page 2

... HL6323MG Typical Characteristic Curves Opticai Output Power vs. Forward Current 0° Forward current, I Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0 Case temperature, T Lasing Wavelength vs. Case Temperature 646 P = 30mW O 644 642 640 638 636 634 632 630 Case temperature, T Rev.0 Aug. 01, 2008 page Threshold Current vs ...

Page 3

... HL6323MG Package Dimensions Rev.0 Aug. 01, 2008 page 5.6 –0.025 1.0 ± 0.1 (0.4) 1.6 ± 0.2 4.1 ± 0.3 3.55 ± 0.1 Emitting Point 3 – 0.45 ± 0 2.0 ± 0.2 OPJ Code JEDEC JEITA Mass (reference value July, 2002 Unit: mm LD/MG — ...

Page 4

... HL6323MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

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