SI8235AB-C-IM Silicon Laboratories Inc, SI8235AB-C-IM Datasheet - Page 15

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SI8235AB-C-IM

Manufacturer Part Number
SI8235AB-C-IM
Description
MOSFET DRVR 4A 2-OUT Half Brdg Non-Inv 14-Pin LGA
Manufacturer
Silicon Laboratories Inc
Datasheets

Specifications of SI8235AB-C-IM

Package
14LGA
Driver Configuration
Non-Inverting
Peak Output Current
4 A
Input Logic Compatibility
TTL
Number Of Outputs
2
Output Resistance
2.7 Ohm
Maximum Rise Time
20 ns
Maximum Power Dissipation
1200 mW
Maximum Supply Current
2.5(Typ) mA
Operating Temperature
-40 to 125 °C
Configuration
Low-Side
Input Type
Non-Inverting
Delay Time
60ns
Current - Peak
4A
Number Of Configurations
2
Voltage - Supply
6.5 V ~ 24 V
Mounting Type
Surface Mount
Package / Case
14-VFLGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI8235AB-C-IM
Manufacturer:
SILICONLABS/芯科
Quantity:
20 000
3. Functional Description
The operation of an Si823x channel is analogous to that of an opto coupler and gate driver, except an RF carrier is
modulated instead of light. This simple architecture provides a robust isolated data path and requires no special
considerations or initialization at start-up. A simplified block diagram for a single Si823x channel is shown in
Figure 8.
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier.
Referring to the Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The
Receiver contains a demodulator that decodes the input state according to its RF energy content and applies the
result to output B via the output driver. This RF on/off keying scheme is superior to pulse code schemes as it
provides best-in-class noise immunity, low power consumption, and better immunity to magnetic fields. See
Figure 9 for more details.
A
Transmitter
control
Dead
time
OSCILLATOR
MODULATOR
Figure 8. Simplified Channel Diagram
RF
Figure 9. Modulation Scheme
Semiconductor-
Based Isolation
Barrier
Rev. 1.1
DEMODULATOR
Receiver
Modulation Signal
Output Signal
Input Signal
Driver
Gnd
V
DD
Si823x
0.5 to 4 A
peak
B
15

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