XP0121100L Panasonic - SSG, XP0121100L Datasheet

TRANS ARRAY NPN/NPN W/RES S MINI

XP0121100L

Manufacturer Part Number
XP0121100L
Description
TRANS ARRAY NPN/NPN W/RES S MINI
Manufacturer
Panasonic - SSG
Datasheets

Specifications of XP0121100L

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
S-Mini 5P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
XP0121100LTR
XP1211-(TX)
XP1211TR
XP1211TR
Composite Transistors
XP01211
Silicon NPN epitaxial planar type
For switching/digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2211 (UN2211) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
(Emitter-coupled transistors with built-in resistor)
FE
Ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XP1211)
a
Symbol
= 25°C ± 3°C
V
V
Symbol
h
T
V
R
P
CBO
I
T
V
V
FE(Small
CEO
/Large)
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
V
I
V
V
V
C
C
C
100
150
150
Note) The part number in the parenthesis shows conventional part number.
CB
CE
EB
CE
CE
CC
CC
CB
50
50
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00136BED
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 9T
Internal Connection
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
EIAJ: SC-88A
10˚
(0.65) (0.65)
0.20
5
1
1.3
2.0
±0.05
±0.1
±0.1
−30%
0.50
Min
2
4.9
0.8
Tr1
50
50
35
5
1
4
3
0.99
Typ
150
1.0
10
2
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Tr2
+30%
4
3
Max
0.25
0.12
0.1
0.5
0.5
0.2
1.2
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1

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