MUN5111DW1T1G ON Semiconductor, MUN5111DW1T1G Datasheet - Page 12

• Manufacturer Part Number: MUN5111DW1T1G
• Description: TRANS BRT PNP DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111DW1T1G

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.001
0.01
0.1
1
0
I
C
/I
B
V
= 10
R
Figure 34. Output Capacitance
5
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
Figure 32. V
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1G
10
−25°C
TBD
0.1
CE(sat)
10
15
1
0
Figure 36. Input Voltage versus Output Current
25°C
versus I
75°C
T
20
A
= −25°C
5
I
C
, COLLECTOR CURRENT (mA)
C
75°C
25
25°C
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10
30
12
0.001
1000
0.01
100
15
100
0.1
10
10
1
1
0
1
Figure 35. Output Current versus Input Voltage
75°C
V
1
O
= 0.2 V
20
T
2
A
Figure 33. DC Current Gain
I
C
= −25°C
V
, COLLECTOR CURRENT (mA)
in
25°C
T
, INPUT VOLTAGE (VOLTS)
3
A
25
= −25°C
4
5
10
25°C
75°C
6
V
7
O
= 5 V
8
V
CE
= 10 V
9
100
10