MUN5313DW1T1G ON Semiconductor, MUN5313DW1T1G Datasheet
MUN5313DW1T1G
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MUN5313DW1T1G Summary of contents
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MUN5311DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series ...
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... ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Device Package MUN5311DW1T1G SOT−363 (Pb−Free) MUN5312DW1T1G SOT−363 (Pb−Free) MUN5313DW1T1G SOT−363 (Pb−Free) MUN5314DW1T1G SOT−363 (Pb−Free) MUN5315DW1T1G SOT−363 (Pb−Free) MUN5316DW1T1G SOT−363 (Pb−Free) MUN5330DW1T1G SOT−363 (Pb−Free) MUN5331DW1T1G SOT−363 (Pb−Free) MUN5332DW1T1G SOT− ...
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... C Collector-Emitter Breakdown Voltage (Note Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% and Q , − minus sign for Q (PNP) omitted Symbol = CBO = CEO MUN5311DW1T1G I EBO MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1 G MUN5332DW1T1G MUN5333DW1T1 G MUN5334DW1T1G MUN5335DW1T1G = 0) V (BR)CBO E = 2.0 mA (BR)CEO http://onsemi.com ...
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... MUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G V OL MUN5311DW1T1G MUN5312DW1T1G MUN5314DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5313DW1T1G V OH MUN5311DW1T1G MUN5312DW1T1G MUN5313DW1T1G MUN5314DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G MUN5330DW1T1G MUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G http://onsemi.com 4 Min Typ Max Unit 35 60 − 60 100 − 80 140 − ...
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... ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q A Characteristic ON CHARACTERISTICS (Note 4) Input Resistor Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G MUN5314DW1T1G MUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G MUN5333DW1T1G MUN5334DW1T1G MUN5335DW1T1G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 300 250 200 150 100 50 0 −50 and Q , − minus sign for Q ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G PNP TRANSISTOR -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G NPN TRANSISTOR -25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat ...
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... TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G NPN TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 24. Output Capacitance 100 0.1 0 Figure 26. Input Voltage versus Output Current 1000 25°C 100 75° 100 MHz 25°C ...
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... TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 29. Output Capacitance 100 10 1 0.1 0 Figure 31. Input Voltage versus Output Current 1000 25°C 75°C 100 100 MHz ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G NPN TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 0.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G PNP TRANSISTOR 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 57. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 62. V versus I CE(sat) 100 75°C 10 25°C 1 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 66. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 71. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 76. V versus I CE(sat) 4.5 4 3.5 3 2.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 81. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G PNP TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 86. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 91. V versus I CE(sat) 4 3.5 3 2.5 2 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G PNP TRANSISTOR 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 96. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G NPN TRANSISTOR 75°C 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 101. V CE(sat) 3.5 3 2.5 2 1.5 1 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G PNP TRANSISTOR 0.1 75°C −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 106. V CE(sat) 1000 100 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G NPN TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 108. V CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 113. V CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 118. V CE(sat) 1.2 1.0 0.8 0.6 0.4 0 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR −25° 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 123. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 128. V CE(sat) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 133. V CE(sat) 5 4.5 4 3.5 3 2.5 2 1.5 1 ...
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... SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: ...