MUN5330DW1T1G ON Semiconductor, MUN5330DW1T1G Datasheet - Page 11

• Manufacturer Part Number: MUN5330DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5330DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 1kohm
• Base-emitter Resistor R2: 1kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SC-88
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.01
0.1
0.8
0.6
0.4
0.2
1
1
0
0
0
I
C
/I
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G PNP TRANSISTOR
B
= 10
Figure 29. Output Capacitance
10
V
Figure 27. V
R
10
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
CE(sat)
20
100
T
0.1
10
A
1
= -25°C
0
Figure 31. Input Voltage versus Output Current
30
versus I
75°C
30
10
C
25°C
T
f = 1 MHz
l
T
40
E
A
A
= 0 V
= -25°C
I
= 25°C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
20
40
50
11
75°C
25°C
0.001
1000
0.01
30
100
100
0.1
10
10
1
0
Figure 30. Output Current versus Input Voltage
1
1
V
40
O
= 0.2 V
2
Figure 28. DC Current Gain
I
C
3
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
50
V
4
O
= 5 V
5
10
T
6
A
= 75°C
T
A
7
= 75°C
-25°C
8
25°C
25°C
-25°C
9
100
10