MUN5235DW1T1G ON Semiconductor, MUN5235DW1T1G Datasheet - Page 15

• Manufacturer Part Number: MUN5235DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5235DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Other names: MUN5235DW1T1G; MUN5235DW1T1GOSTR

Final Product/Process Change Notification #16266
MMBZ5229BLT1G
MMBZ5229BLT1H
MMBZ5230BLT1G
MMBZ5230BLT1H
MMBZ5231BLT1
MMBZ5231BLT1G
MMBZ5231BLT1H
MMBZ5231BLT3G
MMBZ5231ELT1G
MMBZ5232BLT1
MMBZ5232BLT1G
MMBZ5232BLT1H
MMBZ5232BLT3G
MMBZ5232ELT1G
MMBZ5233BLT1G
MMBZ5233BLT1H
MMBZ5234BLT1
MMBZ5234BLT1G
MMBZ5234BLT1H
MMBZ5234ELT1G
MMBZ5235BLT1
MMBZ5235BLT1G
MMBZ5235BLT1H
MMBZ5236BLT1G
MMBZ5236BLT1H
MMBZ5237BLT1G
MMBZ5237BLT1H
MMBZ5237ELT1G
MMBZ5238BLT1G
MMBZ5239BLT1
MMBZ5239BLT1G
MMBZ5239BLT1H
MMBZ5239ELT1G
MMBZ5240BLT1
MMBZ5240BLT1G
MMBZ5240BLT1H
MMBZ5240ELT1G
MMBZ5241BLT1
MMBZ5241BLT1G
MMBZ5241BLT1H
MMBZ5241BLT3G
MMBZ5242BLT1
MMBZ5242BLT1G
MMBZ5242BLT1H
MMBZ5242ELT1G
MMBZ5243BLT1G
MMBZ5243BLT1H
MMBZ5244BLT1
MMBZ5244BLT1G
MMBZ5245BLT1
MMBZ5245BLT1G
MMBZ5245BLT3
MMBZ5245BLT3G
MMBZ5245ELT1G
MMBZ5246BLT1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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