MUN5316DW1T1G ON Semiconductor, MUN5316DW1T1G Datasheet - Page 18

• Manufacturer Part Number: MUN5316DW1T1G
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5316DW1T1G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 4.7kohm
• Rf Transistor Case: SC-88
• No. Of Pins: 6
• Continuous Collector Current Max: 100mA
• Rohs Compliant: Yes
• Dc Collector Current: -100mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: MUN5316DW1T1G; MUN5316DW1T1GOSTR

Final Product/Process Change Notification #16266
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MMSZ27T3
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MMSZ2V4ET1G
MMSZ2V4T1G
MMSZ2V4T3G
MMSZ2V7ET1G
MMSZ2V7T1G
MMSZ2V7T3G
MMSZ30T1G
MMSZ33T1G
MMSZ33T3G
MMSZ36T1
MMSZ36T1G
MMSZ39T1
MMSZ39T1G
MMSZ3V0T1G
MMSZ3V3T1G
MMSZ3V3T1H
MMSZ3V6T1G
MMSZ3V6T3G
MMSZ3V9T1
MMSZ3V9T1G
MMSZ3V9T3G
MMSZ43T1G
MMSZ4678T1G
MMSZ4679T1G
MMSZ4680ET1G
MMSZ4680T1G
MMSZ4681T1G
MMSZ4681T1H
MMSZ4682T1G
MMSZ4683T1G
MMSZ4684T1G
MMSZ4685T1G
MMSZ4686T1G
MMSZ4687T1G
MMSZ4688T1G
MMSZ4689ET1G
MMSZ4689T1
MMSZ4689T1G
MMSZ4689T3
MMSZ4689T3G
MMSZ4690T1
MMSZ4690T1G
MMSZ4690T3G
MMSZ4691T1G
MMSZ4692T1G
MMSZ4693T1
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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