NSTB60BDW1T1G ON Semiconductor, NSTB60BDW1T1G Datasheet - Page 36

• Manufacturer Part Number: NSTB60BDW1T1G
• Description: TRANS BRT PNP/NPN 50V GP SC88
• Manufacturer: ON Semiconductor

Specifications of NSTB60BDW1T1G

• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 140MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Base Input Resistor R1: 22kohm
• Resistor Ratio, R1 / R2: 2.13
• Rf Transistor Case: SOT-363
• C-e Breakdown Voltage: 50V
• Current Rating: -150/150mA
• Drain-source Breakdown Voltage: 50V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSTB60BDW1T1GOS; NSTB60BDW1T1GOS; NSTB60BDW1T1GOSTR

Final Product/Process Change Notification #16266
SZMMSZ5254BT1
SZMMSZ5254BT1G
SZMMSZ5254ET1
SZMMSZ5254ET1G
SZMMSZ5255BT1G
SZMMSZ5256BT1
SZMMSZ5256ET1
SZMMSZ5256ET1G
SZMMSZ5257BT1
SZMMSZ5257BT1G
SZMMSZ5257ET1
SZMMSZ5257ET1G
SZMMSZ5258BT1
SZMMSZ5258BT1G
SZMMSZ5258BT3
SZMMSZ5258ET1G
SZMMSZ5259BT1
SZMMSZ5259BT1G
SZMMSZ5260BT1
SZMMSZ5260BT1G
SZMMSZ5261BT1
SZMMSZ5261BT3G
SZMMSZ5262BT1G
SZMMSZ5265BT1
SZMMSZ5265BT1G
SZMMSZ5266BT3
SZMMSZ5267BT1
SZMMSZ5267BT1G
SZMMSZ5270BT1
SZMMSZ5270BT1G
SZMMSZ5V1T1
SZMMSZ5V1T1G
SZMMSZ5V6ET1
SZMMSZ5V6T1
SZMMSZ5V6T1G
SZMMSZ6V2T1
SZMMSZ6V2T1G
SZMMSZ7V5T1G
SZMMSZ8V2T1
SZMMSZ8V2T1G
SZMMSZ9V1T1G
SZNUP1105LT1G
SZNUP2105LT1G
SZT1003T1
SZT1003T1G
SZT1004T1
SZT1004T1G
SZT1009T1
SZT1010T1
SZT1010T1G
UMC3NT1
UMC3NT1G
UMC5NT1G
UMC5NT2
UMC5NT2G
UMZ1NT1G
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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