MUN5211DW1T1G ON Semiconductor, MUN5211DW1T1G Datasheet - Page 6

• Manufacturer Part Number: MUN5211DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5211DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 10kohm
• Base-emitter Resistor R2: 10kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SOT-363
• No. Of Pins: 6
• Rohs Compliant: Yes
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MUN5211DW1T1GOSTR

0.001
0.01
0.1
4
2
1
0
3
1
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
Figure 2. V
V
20
R
I
C
, REVERSE BIAS VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G
20
CE(sat)
0.1
10
1
0
versus I
Figure 6. Input Voltage versus Output Current
V
30
O
= 0.2 V
T
A
40
= -25°C
C
10
f = 1 MHz
I
T
E
40
75°C
A
I
= 0 V
C
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
T
50
A
= -25°C
6
0.001
75°C
1000
30
0.01
100
100
0.1
10
10
1
1
0
Figure 5. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 3. DC Current Gain
25°C
I
T
C
A
V
, COLLECTOR CURRENT (mA)
3
in
= -25°C
50
, INPUT VOLTAGE (VOLTS)
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
-25°C
= 5 V
9
25°C
100
10