MUN5211DW1T1G ON Semiconductor, MUN5211DW1T1G Datasheet - Page 4
![TRANS BRT NPN DUAL 50V SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
MUN5211DW1T1G
Manufacturer Part Number
MUN5211DW1T1G
Description
TRANS BRT NPN DUAL 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5213DW1T1G.pdf
(20 pages)
Specifications of MUN5211DW1T1G
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Collector Emitter Voltage V(br)ceo
50V
Base Input Resistor R1
10kohm
Base-emitter Resistor R2
10kohm
Resistor Ratio, R1 / R2
1
Rf Transistor Case
SOT-363
No. Of Pins
6
Rohs Compliant
Yes
Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
35
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
MUN5211DW1T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5211DW1T1G
Manufacturer:
ON Semiconductor
Quantity:
50 960
Company:
Part Number:
MUN5211DW1T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MUN5211DW1T1G
Manufacturer:
ONSEMI
Quantity:
20 000
Final Product/Process Change Notification #16266
BAT54T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMSZ5254ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ5265BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
0/6
0/90
0/2
0/30
0/4
0/60
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