NSBC114EDP6T5G ON Semiconductor, NSBC114EDP6T5G Datasheet

TRANS BRT PNP DUAL SOT-963

NSBC114EDP6T5G

Manufacturer Part Number
NSBC114EDP6T5G
Description
TRANS BRT PNP DUAL SOT-963
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSBC114EDP6T5G

Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
408mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSBC114EDP6T5G
Manufacturer:
ON Semiconductor
Quantity:
6 350
NSBC114EDP6T5G Series
Dual Digital Transistors
(BRT)
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−963 package which is designed for low power surface mount
applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 2
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−963 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
These are Halide−Free Devices
Rating
(T
A
= 25°C unless otherwise noted)
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
†For information on tape and reel specifications,
See specific marking information in the device marking table
on page 2 of this data sheet.
NSBC114EDP6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CASE 527AD
DEVICE MARKING INFORMATION
Device
SOT−963
NPN SILICON DIGITAL
X
M
G
ORDERING INFORMATION
(3)
(4)
Q
1
TRANSISTORS
http://onsemi.com
R
= Specific Device Code
= Date Code
= Pb−Free Package
2
(5)
R
(Pb−Free)
SOT−963
Package
1
Publication Order Number:
R
(2)
1
R
NSBC114EDP6/D
2
MARKING
DIAGRAM
1
Tape & Reel
Shipping
Q
(1)
(6)
XM
2
8000 /

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NSBC114EDP6T5G Summary of contents

Page 1

... NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors ...

Page 2

... FR−4 @ 500 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. DEVICE MARKING AND RESISTOR VALUES Device Marking* NSBC114EDP6T5G A (270°) NSBC124EDP6T5G R (0°) NSBC144EDP6T5G D (0°) NSBC114YDP6T5G P (0°) NSBC123TDP6T5G A (90° ...

Page 3

... NSBC123JDP6T5G NSBC144WDP6T5G (BR)CBO V (BR)CEO NSBC114EDP6T5G h FE NSBC124EDP6T5G NSBC144EDP6T5G NSBC114YDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6T5G V CE(sat) NSBC115TDP6T5G V OL NSBC114TDP6T5G NSBC114EDP6T5G NSBC124EDP6T5G NSBC114YDP6T5G NSBC123TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144EDP6T5G NSBC144WDP6T5G NSBC115TDP6T5G http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − ...

Page 4

... NSBC123TDP6T5G/NSBC143ZDP6T5G/NSBC114TDP6T5G/ NSBC115TDP6T5G Input Resistor Resistor Ratio NSBC114EDP6T5G/NSBC124EDP6T5G/ NSBC144EDP6T5G/NSBC123EDP6T5G NSBC114TDP6T5G/NSBC115TDP6T5G//NSBC123TDP6T5G 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0 25°C unless otherwise noted) A Symbol Symbol = 1.0 kW NSBC114TDP6T5G R1 NSBC114EDP6T5G NSBC124EDP6T5G NSBC144EDP6T5G NSBC114YDP6T5G NSBC114YDP6T5G NSBC123TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6TG NSBC115TDP6T5G NSBC114YDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6T5G http://onsemi ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EDP6T5G 1 25° 150° −55° COLLECTOR CURRENT (mA) C Figure 1. V vs. I CE(sat) 2.40 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0. COLLECTOR BASE VOLTAGE (V) CB Figure 3. Output Capacitance 10 25°C 1.0 0. Figure 5. Input Voltage vs. Output Current ...

Page 6

TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 6. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 7. Open Collector Inverter: Inverts the Input Signal http://onsemi.com ISOLATED LOAD ...

Page 7

... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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