NSBC114EPDP6T5G ON Semiconductor, NSBC114EPDP6T5G Datasheet - Page 4

• Manufacturer Part Number: NSBC114EPDP6T5G
• Description: TRANS BRT DUAL COMPL SOT-963
• Manufacturer: ON Semiconductor

Specifications of NSBC114EPDP6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 339mW
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 4)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Input Resistor
Resistor Ratio
A
= 25°C unless otherwise noted, common for Q
TCharacteristic
NSBC144WPDP6T5G
NSBC144WPDP6T5G
NSBC124EPDP6T5G
NSBC144EPDP5T5G
NSBC143EPDP6T5G
NSBC124EPDP6T5G
NSBC144EPDP5T5G
NSBC143EPDP6T5G
NSBC114EPDP6T5G
NSBC114YPDP6T5G
NSBC123TPDP6T5G
NSBC143ZPDP6T5G
NSBC114EPDP6T5G
NSBC114YPDP6T5G
NSBC123TPDP6T5G
NSBC143ZPDP6T5G
NSBC115TPDP6T5G
NSBC123JPDP6T5G
NSBC115TPDP6T5G
NSBC123JPDP6T5G
1
and Q
http://onsemi.com
2
, − minus sign for Q
4
Symbol
R1/R2
R1
1
(PNP) omitted)
0.055
0.038
15.4
32.9
1.54
15.4
1.54
0.17
Min
7.0
7.0
3.3
3.3
0.8
0.8
0.8
0.8
1.7
70
−
−
0.047
0.21
100
Typ
2.2
4.7
4.7
2.2
1.0
1.0
1.0
1.0
0.1
2.1
10
22
47
10
47
−
−
0.185
0.056
Max
28.6
61.1
2.86
28.6
2.86
0.25
130
6.1
6.1
1.2
1.2
1.2
1.2
2.6
13
13
−
−
Unit
kW