NSBA114EDXV6T1G ON Semiconductor, NSBA114EDXV6T1G Datasheet - Page 2
![TRANS BRT PNP DUAL 50V SOT-563](/photos/5/30/53073/sot-563-6_463a_sml.jpg)
NSBA114EDXV6T1G
Manufacturer Part Number
NSBA114EDXV6T1G
Description
TRANS BRT PNP DUAL 50V SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.NSBA123JDXV6T1G.pdf
(11 pages)
Specifications of NSBA114EDXV6T1G
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Other names
NSBA114EDXV6T1G
NSBA114EDXV6T1GOSTR
NSBA114EDXV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBA114EDXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
3 050
Company:
Part Number:
NSBA114EDXV6T1G
Manufacturer:
ON
Quantity:
30 000
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
DEVICE MARKING AND RESISTOR VALUES
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
NSBA114EDXV6T1 / T5
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
NSBA143TDXV6T1 / T5
NSBA113EDXV6T1 / T5
NSBA123EDXV6T1 / T5
NSBA143EDXV6T1 / T5
NSBA143ZDXV6T1 / T5
NSBA124XDXV6T1 / T5
NSBA123JDXV6T1 / T5
NSBA115EDXV6T1 / T5
NSBA144WDXV6T1
Collector-Base Cutoff Current (V
Collector-Emitter Cutoff Current (V
Emitter-Base Cutoff Current
(V
Collector-Base Breakdown Voltage (I
Collector-Emitter Breakdown Voltage (Note 3) (I
Collector-Emitter Saturation Voltage (I
(I
(I
C
C
EB
= −10 mA, I
= −10 mA, I
= −6.0 V, I
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
B
B
C
= −5 mA)
= −1 mA)
= 0)
Device*
Characteristic
NSBA113EDXV6T1/NSBA123EDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
CB
CE
= −50 V, I
C
= −50 V, I
C
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
= −10 mA, I
= −10 mA, I
(T
A
= 25°C unless otherwise noted, common for Q
E
= 0)
B
C
= 0)
= −2.0 mA, I
NSBA144WDXV6T1
E
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA124XDXV6T1
NSBA114EDXV6T1
NSBA114YDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA143ZDXV6T1
NSBA115EDXV6T1
NSBA114TDXV6T1
NSBA123JDXV6T1
E
= 0)
= −0.3 mA)
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Package
http://onsemi.com
B
= 0)
2
V
V
Marking
Symbol
V
(BR)CBO
(BR)CEO
I
I
I
CE(sat)
0M
CBO
CEO
EBO
0A
0B
0C
0D
0E
0G
0H
0K
0N
0P
0F
0L
0J
1
and Q
Min
−50
−50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
R1 (kW)
)
100
4.7
1.0
2.2
4.7
4.7
2.2
10
22
47
10
10
22
47
Typ
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.18
−0.13
−0.05
−0.13
−0.25
−100
−500
Max
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.2
−
−
R2 (kW)
100
1.0
2.2
4.7
10
22
47
47
47
47
47
22
∞
∞
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc