EMD5DXV6T1 ON Semiconductor, EMD5DXV6T1 Datasheet

TRANS BR NPN/PNP DUAL 50V SOT563

EMD5DXV6T1

Manufacturer Part Number
EMD5DXV6T1
Description
TRANS BR NPN/PNP DUAL 50V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMD5DXV6T1

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K, 47K
Resistor - Emitter Base (r2) (ohms)
10K, 47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V / 20 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Frequency - Transition
-
Other names
EMD5DXV6T1OS
EMD5DXV6T1,
EMD5DXV6T5
Product Preview
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMD5DXV6T1 series,
two complementary BRT devices are housed in the SOT−563 package
which is ideal for low power surface mount applications where board
space is at a premium.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
July, 2003 − Rev. P1
The BRT (Bias Resistor Transistor) contains a single transistor with
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch Tape and Reel
Lead Free Solder Plating
Semiconductor Components Industries, LLC, 2003
Preferred Devices
1
ORDERING INFORMATION
EMD5DXV6T1
EMD5DXV6T5
Preferred devices are recommended choices for future use
and best overall value.
Device
U5 = Specific Device Code
D
(4)
(3)
Q
MARKING DIAGRAM
1
= Date Code
http://onsemi.com
R
2
CASE 463A
SOT−563
PLASTIC
6
SOT−563
SOT−563
Package
5 4
U5 D
(5)
R
1
Publication Order Number:
R
(2)
1
1
2 3
R
4000/Tape & Reel
8000/Tape & Reel
2
4 mm pitch
2 mm pitch
Shipping
EMD5DXV6/D
(1)
Q
(6)
2

Related parts for EMD5DXV6T1

EMD5DXV6T1 Summary of contents

Page 1

... The BRT eliminates these individual components by integrating them into a single device. In the EMD5DXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space premium ...

Page 2

... THERMAL CHARACTERISTICS (One Junction Heated) Total Device Dissipation Derate above 25 C Thermal Resistance (Both Junctions Heated) Total Device Dissipation Derate above 25 C Thermal Resistance Junction and Storage Temperature 1. FR−4 @ Minimum Pad EMD5DXV6T1, EMD5DXV6T5 and Q , − minus sign for Rating Characteristic Junction-to-Ambient ...

Page 3

... Collector-Base Breakdown Voltage (I C Collector-Emitter Breakdown Voltage (I = 2.0 mA Current Gain ( 5.0 mA Collector−Emitter Saturation Voltage ( mA Output Voltage ( Output Voltage (off 5 0 Input Resistor Resistor Ratio EMD5DXV6T1, EMD5DXV6T5 = 25 C unless otherwise noted) A Symbol = CBO = CEO = 5.0 mA) I EBO = (BR)CBO = (BR)CEO ...

Page 4

... EMD5DXV6T1, EMD5DXV6T5 250 200 150 100 R = 833 C/W qJA 50 0 − AMBIENT TEMPERATURE ( C) A Figure 1. Derating Curve http://onsemi.com 4 100 150 ...

Page 5

... TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6T1 PNP TRANSISTOR 0.1 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat SERIES REVERSE BIAS VOLTAGE (VOLTS) R Figure 4. Output Capacitance EMD5DXV6T1, EMD5DXV6T5 1000 100 = − 100 MHz 0 − 0. Figure 5. Output Current versus Input Voltage http://onsemi.com − 100 ...

Page 6

... TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6T1 NPN TRANSISTOR − 0.1 0. COLLECTOR CURRENT (mA) C Figure 6. V versus I CE(sat) 1 0.8 0.6 0.4 0 REVERSE BIAS VOLTAGE (VOLTS) R Figure 8. Output Capacitance 100 0.1 0 Figure 10. Input Voltage versus Output Current EMD5DXV6T1, EMD5DXV6T5 1000 25 C 100 100 MHz ...

Page 7

... Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dis- sipation can be doubled using the same footprint. EMD5DXV6T1, EMD5DXV6T5 interface between the board and the package. With the cor- rect pad geometry, the packages will self align when sub- jected to a solder reflow process ...

Page 8

... Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada EMD5DXV6T1, EMD5DXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ...

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