MUN5315DW1T1 ON Semiconductor, MUN5315DW1T1 Datasheet - Page 18

• Manufacturer Part Number: MUN5315DW1T1
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5315DW1T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

0.001
0.001
0.01
0.01
100
0.1
0.1
10
1
1
0
0
Figure 64. Output Current versus Input Voltage
75°C
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G NPN TRANSISTOR
I
C
1
/I
B
= 10
5
T
2
A
I
C
Figure 62. V
= −25°C
V
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
10
4
−25°C
CE(sat)
15
5
25°C
6
versus I
20
7
V
C
O
75°C
8
25
= 5 V
http://onsemi.com
9
10
30
18
1000
100
0.1
10
10
1
1
0
Figure 65. Input Voltage versus Output Current
1
75°C
T
A
= −25°C
5
I
C
Figure 63. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
T
25°C
A
= −25°C
10
10
25°C
75°C
15
V
O
= 0.2 V
20
V
CE
= 10 V
100
25