MUN5332DW1T1G ON Semiconductor, MUN5332DW1T1G Datasheet - Page 5
MUN5332DW1T1G
Manufacturer Part Number
MUN5332DW1T1G
Description
TRANS BRT DUAL 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5312DW1T1G.pdf
(34 pages)
Specifications of MUN5332DW1T1G
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MUN5332DW1T1G
Manufacturer:
ON
Quantity:
30 000
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
(T
ON CHARACTERISTICS (Note 4)
Resistor Ratio MUN5311DW1T1G/MUN5312DW1T1G/MUN5313DW1T1G
Input Resistor
A
= 25°C unless otherwise noted, common for Q
MUN5314DW1T1G
MUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/MUN5331DW1T1G/MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
Characteristic
300
250
200
150
100
50
0
−50
ALL MUN5311DW1T1G SERIES DEVICES
MUN5311DW1T1G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G
MUN5333DW1T1G
MUN5334DW1T1G
MUN5335DW1T1G
1
T
A
and Q
, AMBIENT TEMPERATURE (°C)
0
Figure 1. Derating Curve
R
http://onsemi.com
2
qJA
, − minus sign for Q
= 490°C/W
50
5
1
(PNP) omitted) (Continued)
100
Symbol
R1/R2
R1
0.055
0.038
150
15.4
32.9
15.4
1.54
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
−
0.047
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
0.1
10
22
47
10
10
22
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
13
13
13
−
Unit
k W