MUN5333DW1T1 ON Semiconductor, MUN5333DW1T1 Datasheet - Page 16

• Manufacturer Part Number: MUN5333DW1T1
• Description: TRANS BRT DUAL 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5333DW1T1

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -

0.001
12
10
0.01
8
6
4
2
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR
I
5
C
/I
B
V
R
= 10
10
Figure 54. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 52. V
15
, COLLECTOR CURRENT (mA)
−25°C
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 56. Input Voltage versus Output Current
30
T
30
A
versus I
75°C
= −25°C
75°C
35
10
f = 1 MHz
I
T
I
E
C
A
40
, COLLECTOR CURRENT (mA)
= 0 V
C
= 25°C
25°C
40
http://onsemi.com
45
20
50
50
16
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 55. Output Current versus Input Voltage
75°C
T
V
A
O
1
= −25°C
T
= 0.2 V
40
A
= −25°C
2
Figure 53. DC Current Gain
I
25°C
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
75°C
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10